RA13H3340M是13-watt RF的MOSFET放大器模塊for 12.5-volt，在330-經營移動收音機400-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓(VGG進排水=0V),只是一個很小的泄漏電流與輸入信號衰減的RF高達60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著gate voltage around 4V (minimum), output power and drain current大幅增加.額定輸出功率變為可在4.5V（典型值）和5V（最大）.在VGG=5V,典型柵極電流1 mA.該模塊是專為非線性調頻調制，但可能也可用于線性調制通過設置靜態漏電流隨柵極電壓和輸出功率控制輸入功率.

特征
•增強型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
• Put>13W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：330-400MHz
•低功耗控制電流IGG=1mA (typ)在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作有可能通過設置靜態漏電流同門電壓和輸出功率的控制輸入功率
RA13H3340M： Silicon RF Power Modules RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage(VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
• Enhancement-Mode MOSFET Transistors(IDD?0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ?T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA13H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER： RA13H3340M-101
SUPPLY FORM： Antistatic tray,10 modules/tray
深圳浩時健電子有限公司是國內三菱射頻電子元器件專業供應商，三菱射頻產品廣泛應用用于移動通信基站、直放站、衛星通信、有線電視、雷達、無線本地環等領域。積極向國內生產和科研單位推薦新產品：日本三菱公司生產的系列射頻功率放大模塊、系列射頻場效應三極管。多年以來已為國內眾多的生產廠家、科研院所、大專院校、國家重要單位維修部門的生產、維修、研制開發新品、教學實驗等提供了準確、快捷、方便的配套供貨服務。在經營運作上,我公司批發、零售兼營，可向用戶長期保證貨源，并保證供貨品種的技術指標滿足相關的國際檢測標準。


三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。


三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司長期經營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證全新原裝，正品現貨，最新批號無鉛環保，假一罰十。深圳、香港公司備有大量現貨庫存，可提供樣品，現特價熱賣中。